Resonant tunnelling diodes based on graphene/h-BN heterostructure

Resonant tunnelling diodes based on molecular wires incorporating saturated spacers: a quantum-chemical study

The demand for increased miniaturization of integrated circuits has opened the way to the emerging field of molecular electronics. Recent experimental studies have established that single molecules or a finite ensemble of self-assembled molecules can perform the basic functions of conventional electronic components (i.e., transistors, wires and diodes). In particular, it has been demonstrated t...

Strong Physical Uncloneable Functions using Arrays of Resonant Tunnelling Diodes

A Theoretical Study of BN-Confined Graphene Nanoribbon Based Resonant Tunneling Diodes

The negative differential resistance (NDR) of resonant tunneling diodes (RTDs) enables their use in fast-switching applications and logic circuit designs. So far, RTDs have been realized in Si/SiGe or IIIV compound material systems. However, various emerging devices have been proposed and studied in the past two decades. Recently, graphene nanoribbons (GNRs) have attracted much attention as the...

Graphene/h-BN Heterostructure Interconnects

The material behavior of graphene, a single layer of carbon lattice, is extremely sensitive to its dielectric environment. We demonstrate improvement in electronic performance of graphene nanowire interconnects with full encapsulation by lattice-matching, chemically inert, 2D layered insulator hexagonal boron nitride (hBN). A novel layer-based transfer technique is developed to construct the h-...

Resonant Tunnelling Optoelectronic Circuits

Nowadays, most communication networks such as local area networks (LANs), metropolitan area networks (MANs), and wide area networks (WANs) have replaced or are about to replace coaxial cable or twisted copper wire with fiber optical cables. Light-wave communication systems comprise a transmitter based on a visible or near-infrared light source, whose carrier is modulated by the information sign...